A 300 GHz CMOS Transmitter Front-End for Ultrahigh-Speed Wireless Communications

This paper presents a 300 GHz transmitter front-end suitable for ultrahigh-speed wireless communications. The transmitter front-end realized in TSMC 40 nm CMOS consists of a common-source (CS) based doubler driven by a two-way D-band power amplifier (PA). Simulation results show that the two-way D-band PA obtains a peak gain of 21.6 dB over a -3 dB bandwidth from 132 GHz to 159 GHz. It exhibits a saturated power of 7.2 dBm and a power added efficiency (PAE) of 2.3%, all at 150 GHz. The CS based doubler results in an output power of 0.5 mW at 300 GHz. The transmitter front-end consumes a DC power of 205.8 mW from a 0.9 V supply voltage while it occupies an area of 2.1 mm2

Low-Power D-Band CMOS Amplifier for Ultrahigh-Speed Wireless Communications

This paper presents a low-power D-Band amplifier suitable for ultrahigh-speed wireless communications. The three-stage fully differential amplifier with capacitive neutralization is fabricated in 40 nm CMOS provided by TSMC. Measurement results show that the D-band amplifier obtains a peak gain of 9.6 dB over a -3 dB bandwidth from 138 GHz to 164.5 GHz. It exhibits an output 1 dB compression point (OP1dB) of 1.5 dbm at the center frequency of 150 GHz. The amplifier consumes a low power of 27.3 mW from a 0.7 V supply voltage while its core occupies a chip area of 0.06 mm2

Optimum Design of Subquarter-micrometer-gate CMOS/SOI Circuits for High-speed and Low-power Operation

報告番号: 甲09999 ; 学位授与年月日: 1993-03-29 ; 学位の種別: 課程博士 ; 学位の種類: 博士(工学) ; 学位記番号: 博工第3014号 ; 研究科・専攻: 工学系研究科電子工学専

Key Technologies for THz Wireless Link by Silicon CMOS Integrated Circuits

In terahertz-band communication using ultra-high frequencies, compound semiconductors with superior high-frequency performance have been used for research to date. Terahertz communication using the 300 GHz band has nonetheless attracted attention based on the expectation that an unallocated frequency band exceeding 275 GHz can be used for communication in the future. Research into wireless transceivers using BiCMOS integrated circuits with silicon germanium transistors and advanced miniaturized CMOS integrated circuits has increased in this 300 GHz band. In this paper, we will outline the terahertz communication technology using silicon integrated circuits available from mass production, and discuss its applications and future

Design of terahertz cmos integrated circuits for high-speed wireless communication

This book describes recent research on terahertz CMOS design for high-speed wireless communication. The topics covered include fundamental technologies for terahertz CMOS design, amplifier design, physical design approaches, transceiver design, and future prospects

高速低消費電力のためのサブクォ-タミクロンゲ-トCMOS/SOI回路の最適設計

University of Tokyo (東京大学